NTE2646 silicon npn transistor general purpose amplifier, switch surface mount features: low current low voltage applications: general purpose switching and amplification absolute maximum ratings: collector ? base voltage (open emitter), v cbo 80v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector ? emitter voltage (open base), v ceo 65v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter ? base voltage (open collector), v ebo 6v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dc collector current, i c continuous 100ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak 200ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak base current, i bm 200ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total power dissipation (t a = +25 c, note 1), p tot 200mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . junction temperature, t j +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating ambient temperature range, t a ? 65 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ? 65 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thermal resistance, junction ? to ? ambient (in free air, note 1), r thja 625k/w . . . . . . . . . . . . . . . . . note 1. transistor mounted on a fr4 printed ? circuit board. electrical characteristics: (t a = +25 unless otherwise specified) parameter symbol test conditions min typ max unit collector ? base cut ? off current i cbo v cb = 30v, i e = 0 ? ? 15 na v cb = 30v, i e = 0, t j = +150 c ? ? 5 a emitter ? base cut ? off current i ebo v eb = 5v, i c = 0 ? ? 100 na dc current gain h fe i c = 10 a, v ce = 5v ? 150 ? i c = 2ma, v ce = 5v 200 290 450 collector ? emitter saturation voltage v ce(sat) i c = 10ma, i b = 0.5ma ? 90 250 mv i c = 10ma, i b = 5ma, note 2 ? 200 600 mv base ? emitter saturation voltage v be(sat) i c = 10ma, i b = 0.5ma ? 700 ? mv i c = 10ma, i b = 5ma, note 2 ? 900 ? mv note 2. pulse test: t p 300 s, 0.02.
electrical characteristics (cont?d): (t a = +25 unless otherwise specified) parameter symbol test conditions min typ max unit base ? emitter voltage v be i c = 2ma, v ce = 5v 580 660 700 mv i c = 10ma, v ce = 5v ? ? 770 mv collector capacitance c c v cb = 5v, i c = i e = 0, f = 1mhz ? ? 3 pf transition frequency f t v ce = 5v, i c = 10ma, f = 100mhz 100 ? ? mhz noise figure f i c = 200 a, v ce = 5v, r s = 2k ? , f = 1khz, b = 200hz ? ? 10 db .051 (1.3) .086 (2.2) max .051 (1.3) .043 (1.1) .003 (0.1) .014 (0.35) .025 (0.65) b c e .087 (2.2) max
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